Barrier and electroplating seed layer

ABSTRACT

A barrier layer material and method of forming the same is disclosed. The method includes depositing a graded metal nitride layer in a single deposition chamber, with a high nitrogen content at a lower surface and a high metal content at an upper surface. In the illustrated embodiment, a metal nitride with a 1:1 nitrogen-to-metal ratio is initially deposited into a deep void, such as a via or trench, by reactive sputtering of a metal target in nitrogen atmosphere. After an initial thickness is deposited, flow of nitrogen source gas is reduced and sputtering continues, producing a metal nitride with a graded nitrogen content. After the nitrogen is stopped, deposition continues, resulting in a substantially pure metal top layer. This three-stage layer includes a highly conductive top layer, upon which copper can be directly electroplated without a separate seed layer deposition. Advantageously, native oxide on the top metal surface can be cleaned in situ by reversing polarity in the electroplating solution just prior to plating.

FIELD OF THE INVENTION

The present invention relates in general to a barrier/seed layer in anintegrated circuit, over which metal can be directly electroplated, andmethods of making the same. More particularly, the invention relates toan in situ formed metal nitride barrier layer and metal seed layer forelectroplating copper within vias or trenches.

BACKGROUND OF THE INVENTION

When fabricating integrated circuits (IC), layers of insulating,conducting and semiconducting materials are deposited and patterned.Contact vias or openings are commonly formed in insulating materialsknown as interlevel dielectrics (ILDs). The vias are then filled withconductive material, thereby interconnecting electrical devices andwiring at various levels. Damascene processing similarly involvesetching trenches in insulating layers in a desired pattern for a wiringlayer. These trenches are then filled with conductive material toproduce the integrated wires. Where contact vias, extending downwardlyfrom the bottom of the trenches, are simultaneously filled, the processis known as dual damascene.

Conductive elements, such as gates, capacitors, contacts, runners andwiring layers, must each be electrically isolated from one another forproper IC operation. In addition to interlevel dielectrics surroundingcontacts, care must be taken to avoid conductive diffusion and spiking,which can cause undesired shorts between devices and contacts.Protective barriers are often formed between via or trench walls andmetals in a substrate assembly, to aid in confining deposited materialwithin the via or trench walls. Barriers are thus useful for damasceneand dual damascene interconnect applications, particularly for small,fast-diffusing elements such as copper. Barriers also have applicationover transistor active areas and other circuit elements from or to whichdopants tend to migrate during high temperature processing.

Candidate materials for protective barriers should foremost exhibiteffective diffusion barrier properties. Additionally, the materialsshould demonstrate good adhesion with adjacent materials (e.g., oxidevia walls, metal fillers). For many applications, a barrier layer ispositioned in a current flow path and so must be conductive. Typically,barriers have been formed of metal nitrides (MN_(x)) such as titaniumnitride (TiN) or tungsten nitride (WN), which are dense, amorphous andadequately conductive for lining contact vias and other conductivebarrier applications.

These lined vias or trenches are then filled with metal by any of avariety of processes, including chemical vapor deposition (CVD),physical vapor deposition (PVD), forcefill, hot metal reflow, etc. Thesemethods attempt to completely fill deep, narrow openings without formingvoids or keyholes. More recently, processing advancements have enabledthe employment of copper as an interconnect material, taking advantageof its low resistivity. Typically, copper is electroplated over thesubstrate surface in order assure adequate filling of deep vias ortrenches.

It is difficult, however, to satisfactorily electroplate copper (Cu)directly over the metal nitride barriers. Although metal nitrides can besufficiently conductive for circuit operation, where current flowsthrough the thickness of the barrier layer, lateral conductivity acrosssuch layers is inconsistent. High sheet resistivity makes it difficultto maintain an equipotential surface. Accordingly, a seed layer ofcopper is typically first deposited over the barrier, such as by PVD,and the workpiece is then transferred to an electroplating bath tocomplete the deposition. The seed layer thus represents an additionalprocessing step, adding significantly to process overhead.

Accordingly, there is a need for improved processes and materials forprotective barriers in integrated circuits. Desirably, such processesshould also be compatible with conventional fabrication techniques, andthereby easily integrated with existing technology.

SUMMARY OF THE INVENTION

In accordance with one aspect of the invention, a method is provided forfabricating an integrated circuit. The method includes loading asemiconductor workpiece into a chamber and providing a metal source anda supply of nitrogen source gas to the chamber. A conductive barrierlayer is deposited on the workpiece within the chamber from the metalsource and the nitrogen source gas. The supply of nitrogen source gas isreduced while depositing the barrier layer.

In accordance with another aspect of the invention, a method is providedfor forming a conductive structure in an opening in a partiallyfabricated integrated circuit. The opening can be, for example, acontact via or a wiring trench. A metal target is sputtered in thepresence of an amount of nitrogen source gas, thereby forming a metalnitride layer in the opening. The amount of nitrogen source gas isreduced during the process. After reducing the amount of nitrogen sourcegas the metal target is further sputtered to form a substantially metallayer over the metal nitride layer in the opening. A second metal isthen electroplated onto the top surface of the metal layer.

In accordance with another aspect of the present invention a method isprovided for forming a wiring element with a barrier/seed layer in anintegrated circuit. The method includes depositing an initial metalnitride layer, having a first nitrogen content, into an opening in aninterlevel dielectric. A second metal nitride layer is depositeddirectly onto the initial metal nitride layer and has a second nitrogencontent lower than the first nitrogen content. A substantially metalseed layer is then deposited directly onto the second metal nitridelayer, and copper directly electroplated onto the substantially metalseed layer.

In accordance with another aspect of the invention, a protective barrieris interposed between a highly conducting metallic element in anintegrated circuit and an interlevel dielectric. The barrier includes ametallic nitride sub-layer. A nitrogen content in the metallic nitrideis graded from a first concentration adjacent the interlevel dielectricto about zero adjacent the metallic element.

In accordance with another aspect of the invention, an integratedcircuit includes a wiring structure within an opening of an insulatinglayer. The wiring structure includes a barrier portion, which in turnincludes at least one metal nitride sub-layer. A metal sub-layerdirectly overlies the barrier portion and has the same metal as themetal nitride sub-layer. A copper layer directly overlies the at leastone metal sub-layer.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other aspects, features and advantages of this invention willbe apparent from the detailed description of the preferred embodimentand the accompanying drawings, which are intended to illustrate and notto limit the invention. Like reference numerals are employed todesignate like parts throughout the figures, wherein:

FIG. 1 is a flow diagram illustrating a process for forming a conductivebarrier/seed layer and electroplating metal directly thereover, inaccordance with a preferred embodiment of the present invention;

FIG. 2 is a partial elevational cross-section of a partially fabricatedintegrated circuit or substrate assembly, showing a conventionalinterlevel dielectric and a contact via therethrough, exposing aconductive circuit element beneath the via;

FIG. 3 shows the substrate assembly of FIG. 2 after deposition of aninitial metal nitride barrier sub-layer into the via;

FIG. 4 shows the substrate assembly of FIG. 3 after continued depositionof a second barrier sub-layer, having a greater metal content, into thevia and over the initial sub-layer;

FIG. 5 shows the substrate assembly of FIG. 4 after continued depositionof a third barrier sub-layer, serving as a metal seed layer, into thevia and over the second sub-layer, thereby completing the barrier layer;

FIG. 6 shows the substrate assembly of FIG. 5 after copper has beendirectly electroplated onto the metal seed layer or upper portion of thebarrier layer;

FIG. 7 shows the substrate assembly of FIG. 6 after the via has beenfilled with copper; and

FIG. 8 graphically depicts a nitrogen source gas flow rate during insitu formation of the barrier sub-layers.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

The preferred embodiments are illustrated in the context ofmetallization processes in an integrated circuit, including contact studformation and damascene processes, where a barrier layer lines a voidand copper is electroplated thereover. The skilled artisan will readilyappreciate, however, that the materials and methods disclosed hereinwill have application in a number of other contexts where a barrierlayer is desirable, particularly where lateral conductivity through thebarrier is important.

Conventional via or trench barriers comprise metal nitrides, such astitanium nitride (TiN) and tungsten nitride (WN_(x)). Chemical vapordeposition processes have been developed for some such materials, andphysical vapor deposition (e.g. sputtering) is utilized for others.Metal suicides (MSi_(x)) and ternary compounds (MSi_(x)N_(y)) can alsobe employed in addition to or in place of metal nitrides for moreeffective adhesion to insulating material of the via or trenchsidewalls, and for ohmic contact with underlying circuit elements.

FIG. 1 schematically illustrates a process flow for forming abarrier/seed layer over which metal can be directly electroplated inaccordance with a preferred embodiment of the invention. As shown, theprocess begins with formation 2 of a contact via through an insulatinglayer. It will be understood that the same process may be applied totrenches, such as in damascene metallization process flows.

Following via formation 2, a barrier/seed layer is formed 4 within thevia. For purposes of illustration, the formation 4 is broken into threephases 5-7. It will be understood from the description below, however,that the barrier/seed formation 4 preferably constitutes a singlefabrication process conducted in situ in the same process chamber.

The formation 4 thus includes first lining 5 the via with an initialmetal nitride layer or initial barrier sub-layer. A second metal nitridelayer, or second barrier sub-layer is then applied 6, preferably havinga greater metal content than the initial barrier sub-layer, and morepreferably having a graded metal content. A metal seed layer or thirdbarrier sub-layer is then formed 7 over the previous sub-layers. Thismetal seed layer is preferably substantially metal. The structure may beoptionally precleaned, as discussed in more detail below. Copper orother metal is electroplated 8 directly onto the metal seed layer.

As noted, all sub-layers of the barrier/seed layer are preferably formed4 sequentially in a single processing tool, more preferably in acontinuous deposition process. Most preferably, the tool comprises aPVD, and more preferably a sputtering tool, and the deposition comprisesreactive sputtering. The skilled artisan will readily appreciate,however, that the principles disclosed herein can be applied to othertypes of deposition, such as chemical vapor deposition.

Note that, in the present the disclosure, the layer can alternatively bereferred to as a barrier/seed layer, and barrier and seed layer, or abarrier layer including a seed layer. This is due to the fact that, froma fabrication viewpoint, all three sub-layers are formed, preferablycontinuously, in the same process tool. From a functional viewpoint, thetopmost metallic (substantially nitrogen-free) layer serves anelectroplating seed function, while the lower sub-layer(s) serve abarrier function. From a structural viewpoint, the various sub-layerscan be distinguished from one another by, for example, XPS analysis.

Sputtering in accordance with the illustrated embodiment is conducted inany suitable chamber, and the illustrated embodiment employs a DCmagnetron sputtering chamber (not shown), such as is commerciallyavailable under the trade name Endura 5500 PVD II™, from AppliedMaterials, Inc. of Santa Clara, Calif. The skilled artisan willrecognize that other sputtering equipment can also be used. The chamberhouses a target cathode and pedestal anode. In other arrangements, thechamber walls can form the anode.

The target cathode is preferably metallic, such as tungsten (W),tantalum (Ta), titanium (Ti), tantalum silicide (TaSi_(x)), titaniumsilicide (TiSi_(x)), etc., and more preferably comprises a “pure”(greater than 99% pure) metal target. In the illustrated embodiment, apure W target is employed.

A gas inlet into the chamber includes a heavy inert gas, preferablyargon, for bombarding the target when a plasma is activated within thechamber. Additionally, a nitrogen source gas, preferably nitrogen (N₂)or ammonia (NH₃), is also introduced to the chamber during deposition. Afurther carrier gas, such as hydrogen gas (H₂) is preferably alsointroduced into the sputtering chamber to aid in supporting an activeplasma within the chamber.

A workpiece 10 (FIGS. 2-7) is mounted in the sputtering chamber. In thepreferred embodiment, argon gas flows into the chamber at a rate ofbetween about 10 sccm and 100 sccm, more preferably between about 25sccm and 50 sccm. N₂ gas flow preferably starts during initial stages ofdeposition between about 10 sccm and 50 sccm, more preferably betweenabout 15 sccm and 25 sccm, and is preferably reduced to about zero flowby the end of the deposition 4. The preferred chamber operates at apower preferably of about 1 kW to 3.5 kW, and a pressure preferably ofat least about 0.1 mTorr, more preferably at about 0.5 mTorr to 20mTorr. The skilled artisan will readily appreciate that these parameterscan be adjusted for sputtering chambers of different volumes, electrodeareas and electrode spacing.

FIG. 8 shows relative nitrogen source gas flow rates during thepreferred three phases 5-7 of depositing 4 the barrier/seed layer.Sputtering conditions (ie., power, argon and carrier flow, pressure) aremaintained relatively constant during the process 4. As shown, however,the nitrogen source gas is reduced during the process, preferably tozero by the end of the deposition 4.

In the illustrated embodiment, the initial phase 5 comprises the highestflow rate. Under the preferred sputtering conditions described above, Arions strike the W target, liberating tungsten atoms and causing aninitial barrier sub-layer 20 (FIG. 3) to form on the substrate. Due tothe presence of the nitrogen source gas (N₂ in the illustratedembodiment), the sputtered film incorporates nitrogen in a process knownas reactive sputtering. Deposition under these conditions is preferablyconducted for a time period sufficient to form the thickness asdescribed hereinbelow with respect to FIG. 3. The high nitrogen sourceflow rate produces a film in which the ratio of nitrogen to tungsten inthe resultant film is preferably greater than about 1:2, and morepreferably about 1:1. The initial sub-layer 20 thus preferably comprisesa stoichiometric metal nitride. It will be understood, of course, thatthe nitride can comprise a ternary compound (e.g., TaSi_(x)N_(y) orTaSi_(x)N_(y)) where the metallic target comprises a metal silicide.

The second phase 6 of deposition 4 is conducted without removing theworkpiece from the sputtering chamber. Preferably, sputtering continueswhile the nitrogen source gas flow rate is reduced.

In the illustrated embodiment, the flow of nitrogen source gas isreduced linearly with time from the level during the initial phase 5down to zero. It will be understood that, in other arrangements, thenitrogen gas source can be reduced in a nonlinear fashion, decreasingthe amount of nitride deposited on the substrate assembly 10 in aparabolic, hyperbolic, other exponential or stepped manner. The secondphase 6 preferably continues for a time period sufficient to form thethickness as described hereinbelow with respect to FIG. 4. The nitrogencontent in the resultant film is thus preferably graded from a highlevel at the lower surface (merging with the initial barrier sub-layer)to about zero at the top surface.

The third phase 7 of deposition 4 is also conducted without removing theworkpiece from the sputtering chamber. Preferably, sputtering continueswhile the nitrogen source gas flow is shut off. Accordingly, simplemetal sputtering results in substantially pure metal sub-layer. Thethird phase 7 preferably continues for a time period sufficient to formthe thickness as described hereinbelow with respect to FIG. 5.

TABLE Ar Gas Flow N₂ Gas Flow Pressure (sccm) (sccm) (mTorr) Power (kW)Initial Sub-layer 50 20 25 1.0 Second Sub-layer 50 20 to 0 25 1.0 Seedsub-layer 50 0 25 1.0

FIGS. 2-7 illustrate structures that result from the process describedand shown in FIGS. 1 and 8.

With reference initially to FIG. 2, a partially fabricated integratedcircuit is shown on a workpiece or substrate assembly 10. The structureis formed above a substrate (not shown), which may comprise asingle-crystal silicon wafer or other semiconductor layer in whichactive or operable portions of electrical devices are formed. Aninterlevel dielectric (ILD) 12 is formed above the substrate. TypicalILD materials include oxides formed from tetraethylorthosilicate (TEOS),borophosphosilicate glass (BPSG), polyamide, etc., and the illustratedILD 12 comprises BPSG. The ILD 12 has a thickness adequate toelectrically insulate underlying conductors from overlying conductors,which depends upon circuit design and operational parameters. In theillustrated embodiment, where the substrate assembly represents a 64Mbit dynamic random access memory (DRAM) circuit, the ILD 12 preferablyhas a thickness between about 0.40 μm and 0.60 μm.

An opening is etched through the ILD 12 to expose an underlyingconductive circuit element. In the illustrated embodiment, the openingcomprises an intermetal contact via 14, though in other arrangements theopening can comprise a contact opening to the substrate or a wiringtrench. For current state-of-the-art circuit designs, the via 14 has awidth of less than about 0.25 μm, more preferably less than about 0.20μm. Such narrow dimensions result in aspect ratios (height: width)greater than about 1:2, and more preferably greater than about 1:1. Inthe illustrated embodiment, a metal-to-metal contact is formed in a via14 with an aspect ratio between about 3:1 and 4:1. Aspect ratios infuture generation integrated circuits will likely be higher still, sinceparasitic capacitance concerns limit ILD thickness scaling while lateraldimensions continued to be scaled. Conventional photolithographytechniques can be employed to define the via 14, and anisotropic etching(e.g., reactive ion etching) is preferred for producing vertical viasidewalls.

The illustrated circuit element exposed by the etch comprises a contactlanding pad of an underlying conductive runner or wiring layer 18. Theconductive layer 18 preferably comprises copper, aluminum or alloysthereof, though the skilled artisan will appreciate that otherconductive materials may be suitable, depending upon the function anddesired conductivity of the circuit element. The illustrated embodimentincludes an antireflective layer 16 (e.g., TiN), through which the via14 preferably extends.

With reference to FIG. 3, an initial barrier layer or sub-layer 20 isthen deposited over the substrate assembly 10 and onto the sidewalls andfloor of the via 14, preferably by PVD, more preferably by the reactivesputtering process described above. The initial barrier sub-layer 20preferably comprises a metal nitride (MN_(x) and comprises tungstennitride (WN_(x) in the illustrated embodiment. As noted above, theinitial barrier sub-layer in other arrangements can compriseTaSi_(x)N_(y), TiSi_(x)N_(y), or other ternary compounds. The depositedinitial barrier sub-layer 20 has a composition suitable for conductivebarrier properties and is preferably characterized by anitrogen-to-metal ratio 1:2 and more preferably about 1:1 (e.g., WN).

Preferably, the initial barrier sub-layer 20 is deposited thickly enoughto produce a sidewall thickness of between about 25 Å and 125 Å, morepreferably between about 50 Å and 75 Å, and most preferably about 50 Å,depending upon the desired barrier properties. To obtain such a sidewallthickness, the initial barrier sub-layer 20 is deposited to a thicknessof between about 200 Å and 300 Å, as measured on the top surfaces of thesubstrate assembly 10.

Referring to FIG. 4, a second barrier layer or sub-layer 22 is thenintegrally formed over the initial barrier sub-layer 20, preferably inthe same process chamber in which the initial barrier sub-layer 20 wasformed and by the preferred second phase of the process described above.The second barrier sub-layer 22 thus has a higher metal content than theinitial barrier sub-layer 20. Preferably, the sub-layer 22 is graded tohave higher metal content at a top surface than at the interface withthe initial barrier sub-layer 20. More preferably, the second sub-layer22 has a graded composition from a 1:1 nitrogen-to-metal ratio (e.g.,WN) at the lower surface to substantially a nitrogen-free composition atthe top surface (e.g., substantially pure W). In the illustratedembodiment, the grading is linear, though it will be understood that thegraded composition can follow a step function, parabolic, hyperbolic, orother form.

Preferably, the second barrier sub-layer 22 is deposited to produce asidewall thickness between about 25 Å and 125 Å, more preferably betweenabout 50 Å and 75 Å, and most preferably about 50 Å, depending uponnature of the gradient. To obtain such a sidewall thickness, the initialbarrier sub-layer 22 is deposited to a thickness of between about 200 Åand 300 Å, as measured on the top surfaces of the substrate assembly 10.

Advantageously, the graded nitrogen content in the barrier/seed layer,and in the illustrated embodiment in the second barrier sub-layer 22results in differing grain structures and orientations. Accordingly,grain boundaries at different depths in the sub-layer 22 are unlikely tobe aligned. Since grain boundaries provide low resistance to diffusion,the result of the graded barrier is that the overall resistance todiffusion, e.g., of mobile copper atoms, is high. The linearly gradedbarrier sub-layer 22 thus serves as a particularly effective diffusionbarrier.

Referring to FIG. 5, a third barrier layer or sub-layer 24 is formeddirectly over the second barrier sub-layer 22, preferably in the sameprocess chamber in which the previous sub-layer 22 was formed and by thepreferred third phase of the process described above. The thirdsub-layer 24 is more highly conductive than the underlying portions ofthe barrier/seed layer, preferably comprising substantially pure metal(e.g., W). It will be understood, of course, that the metal seed layerof the illustrated embodiment may comprise trace amounts of impurities,including nitrogen, and can in other arrangements comprise an alloy(e.g., TiSi_(x) or TaSi_(x)). In any case, the high conductivity (lowresistivity) of this top-most sub-layer 24 allows it serve as a metalseed layer for direct copper electroplating to follow in the illustratedembodiment.

The third barrier sub-layer 24 is preferably deposited to produce asidewall thickness between about 25 Å and 200 Å, more preferably betweenabout 50 Å and 100 Å, and most preferably about 75 Å, depending upon theavailable space within the via 14. To obtain the above-identifiedsidewall thickness, the metal seed layer 24 deposited to a thickness ofbetween about 300 Å and 2,000 Å, more preferably between about 500 Å and2,000 Å, and most preferably about 750 Å, as measured on the topsurfaces of the substrate assembly.

Together, the sub-layers 20, 22, 24 form a barrier/seed layer 25,including a barrier portion 20, 22 and a seed layer 24. As noted, thethird sub-layer 24 does not primarily serve a barrier function. From aprocess standpoint, however, the third sub-layer 24 forms an integralpart of the barrier layer 25 because it is formed in situ in the sametool as the initial and second sub-layers 20, 22, preferably in acontinuous process.

The barrier/seed layer 25, though formed in situ in a single processchamber, is graded from a high nitrogen content lower portion to a lowor zero nitrogen content upper portion. In the illustrated embodiment,the barrier/seed layer 25 includes three sub-layers formed in differentphases or stages of a continuous deposition process, advantageouslyreducing manufacturing costs relative to conventional processes.Desirably, the second 22 of the sub-layers is graded, while the lowersub-layer 20 has a high nitrogen content, preferably with anitrogen-to-metal content of about 1:1, and the upper sub-layer 24 has alow nitrogen content, preferably zero. Consequently, the upper portionsof the barrier layer 25 exhibit higher conductivity than lower portions.

After the barrier layer 25 is formed, the workpiece 10 is removed fromthe sputtering chamber in preparation for electroplating metal upon theupper surface. In the illustrated embodiment, the exposed surface of thebarrier/seed layer 25 (i.e., the third sub-layer 24) comprisessubstantially pure tungsten, and is accordingly readily oxidized uponexposure to atmospheric oxidants. This native oxide can be optionallyprecleaned prior to electroplating. Conventional precleaning can beperformed, for example, in a dilute hydrofluoric acid (HF) dip. In onearrangement, the workpiece 10 is dipped in a solution of 100:1 dilute HFfor about 15-20 seconds.

More preferably, the workpiece 10 is transferred from the sputteringchamber to an electroplating solution without precleaning. The solutioncan comprise a conventional electroplating solution, including metalsulfate solution and acids. The illustrated embodiment employs coppersulfate. Most preferably, the solution further comprises organicadditives to inhibit plating at the top surfaces of the workpiece.Copper electroplating solutions, including organic additives, arecommercially available, for example, from Shipley, Inc. of Santa Clara,Calif.

In place of precleaning, native oxide on the exposed metal surface ofthe barrier/seed layer 25 is reduced in situ by applying a reversepolarity potential to the solution. Preferably, a potential betweenabout 0.5 V and 2 V is applied for a period of between about 5 secondsand 30 seconds.

Referring to FIG. 6, following in situ oxide reduction, polarity isreversed to plate a copper layer 26 on the metal sub-layer 24 of thebarrier layer 25. Preferably, copper plating is conducted with directcurrent, constant current mode. Plating current density is preferablyless than about 80 mA/cm², more preferably between about 5 mA/cm² and 40mA/cm², somewhat lower than densities for more conductive copper seedlayers.

Referring to FIG. 7, plating continues until the copper layer 26 isadequately thick for low resistivity, high speed signal transmission. Inthe illustrated embodiment, metal ions preferentially plate the innersurfaces of the via 14, in which the large organic molecules do notreadily diffuse, and the via 14 is allowed to fill without pinching off.The via 14 is thereby filled, as shown.

Contact formation may be subsequently planarized leave a contact plug,or it may be followed by photolithographic patterning and etching of thelayer 26 above the ILD 12. In other arrangements, the opening lined withthe barrier/seed layer 25 and plated with copper 26 represents a via,trench or both in damascene or dual damascene processes. In accordancewith dual damascene processing, for example, a contact via extends fromthe bottom of a trench, which has been etched into an ILD in a desiredwiring pattern. Following plating, the copper layer 26 is preferablyplanarized by chemical mechanical polishing (CMP) or other etchbackprocess to leave isolated wiring lines within the trenches.

Although this invention has been described in terms of a certainpreferred embodiment and suggested possible modifications thereto, otherembodiments and modifications may suggest themselves and be apparent tothose of ordinary skill in the art are also within the spirit and scopeof this invention. Accordingly, the scope of this invention is intendedto be defined by the claims that follow.

I claim:
 1. A method of forming a conductive structure in an opening ina partially fabricated integrated circuit, comprising: initiallysputtering a metal target in the presence of an amount of nitrogensource gas, thereby forming a metal nitride layer in the opening;reducing a flow rate of the nitrogen source gas linearly with time;further sputtering the metal target after reducing the amount ofnitrogen source gas to form a substantially metal layer over the metalnitride layer in the opening, the metal layer having a top surface; andelectroplating a second metal onto the top surface of the metal layer.2. The method of claim 1, wherein initially sputtering is at leastpartially conducted while reducing the amount of nitrogen source gas. 3.The method of claim 2, wherein initially sputtering is partiallyconducted prior to reducing the amount of nitrogen source gas.
 4. Themethod of claim 1, further comprising reducing a native oxide from thetop surface of the metal layer prior to electroplating the second metal.5. The method of claim 4, wherein reducing the native oxide compriseselectrochemically reducing in a solution prior to electroplating thesecond metal in the solution.
 6. The method of claim 4, wherein reducingthe native oxide comprises dipping the native oxide in a hydrofluoricacid solution.
 7. The method of claim 1, wherein the metal nitridecomprises tungsten nitride and the second metal comprises copper.
 8. Themethod of claim 1, wherein the nitrogen source gas comprises nitrogengas.
 9. The method of claim 1, wherein the opening comprises a contactvia through an oxide layer.
 10. The method of claim 1, wherein theopening comprises a wiring trench in an insulating layer.
 11. A methodof forming a wiring element with a barrier/seed layer in an integratedcircuit, comprising: depositing an initial metal nitride layer having afirst nitrogen content into an opening in an interlevel dielectric of asubstrate assembly, the opening comprising sidewalls and a floor;depositing a second metal nitride layer directly onto the initial metalnitride layer, the second metal nitride having a second nitrogen contentlower than the first nitrogen content; depositing a substantially metalseed layer directly onto the second metal nitride layer, whereindepositing the initial metal nitride layer, the second metal nitridelayer and the metal seed layer are all conducted in situ withoutremoving the substrate assembly from a deposition chamber;electroplating copper directly onto the substantially metal seed layer;and precleaning the metal seed layer prior to electroplating, whereinprecleaning comprises immersing the substrate assembly in a solution andapplying a potential.
 12. The method of claim 11, wherein depositing theinitial metal nitride layer comprises sputtering a refractory metal orrefractory metal silicide in a nitrogen-bearing environment.
 13. Themethod of claim 12, wherein the nitrogen-bearing environment comprisesN₂ gas.
 14. The method of claim 12, wherein depositing the metal seedlayer comprises sputtering a metal target.
 15. The method of claim 14,wherein depositing the initial metal nitride layer, the second metalnitride layer and the metal seed layer comprises sputtering the samemetal target.
 16. The method of claim 11, wherein the solution comprisescopper ions and electroplating is conducted with a reversed polarity inthe same solution.
 17. The method of claim 16, wherein the solutionfurther comprises organic additives.
 18. The method of claim 11, whereinelectroplating comprises filling the opening with copper.
 19. The methodof claim 11, wherein the opening comprises a contact via through theinterlevel dielectric.
 20. The method of claim 19, wherein the viaextends downwardly from the floor of a trench.
 21. The method of claim11, wherein the first nitrogen content is a ratio of nitrogen to metalof at least about 1:2 in the initial metal nitride layer.